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No. 5SYA 1554-01 Oct 03 * /RZORVVUXJJHG637FKLSVHW * 6PRRWKVZLWFKLQJ637FKLSVHWIRU JRRG(0& * ,QGXVWU\VWDQGDUGSDFNDJH * +LJKSRZHUGHQVLW\ * $O6L&EDVHSODWHIRUKLJKSRZHU F\FOLQJFDSDELOLW\ * $O1VXEVWUDWHIRUORZWKHUPDO UHVLVWDQFH 0D[LPXPUDWHGYDOXHV 3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV PLQ PD[ 8QLW VCES VGE = 0 V 1700 V DC collector current IC Tc = 80 C 1800 A Peak collector current ICM tp = 1 ms, Tc = 80 C 3600 A 20 V 13900 W Gate-emitter voltage Total power dissipation VGES Ptot -20 Tc = 25 C, per switch (IGBT) DC forward current IF 1800 A Peak forward current IFM 3600 A Surge current IFSM 16500 A 10 s 4000 V 150 C VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1000 V, VCEM CHIP 1700 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Storage temperature Mounting torques Tvj(op) -40 125 C Tstg -40 125 C M1 Base-heatsink, M6 screws 4 6 M2 Main terminals, M8 screws 8 10 1) Maximum rated values indicate limits beyond which damage to the device may occur $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Nm 61$( ,*%7FKDUDFWHULVWLFYDOXHV 3DUDPHWHU 6\PERO &RQGLWLRQV PLQ Collector (-emitter) breakdown voltage V(BR)CES 1700 VGE = 0 V, IC = 10 mA, Tvj = 25 C 2) Collector-emitter saturation voltage V Tvj = 125 C 2.6 2.9 V Tvj = 25 C 12 mA Tvj = 125 C 120 mA -500 500 nA 4.5 6.5 V ICES VCE = 1700 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 C Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance L CE Resistance, terminal-chip RCC'+EE' V 2.6 Collector cut-off current Qge 8QLW 2.3 IC = 1800 A, VGE = 15 V Gate charge PD[ Tvj = 25 C VCE sat Gate-emitter threshold voltage W\S IC = 1800 A, VCE = 900 V, VGE = -15 V .. 15 V 15.1 C 166 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 16.5 nF 6.98 VCC = 900 V, IC = 1800 A, RG = 0.82 , VGE = 15 V, L = 60 nH, inductive load VCC = 900 V, IC = 1800 A, RG = 0.82 , VGE = 15 V, L = 60 nH, inductive load VCC = 900 V, IC = 1800 A, VGE = 15, RG = 0.82 , L = 60 nH, inductive load VCC = 900 V, IC = 1800 A, VGE = 15, RG = 0.82 , L = 60 nH, inductive load Tvj = 25 C 270 Tvj = 125 C 285 Tvj = 25 C 220 Tvj = 125 C 230 Tvj = 25 C 855 Tvj = 125 C 950 Tvj = 25 C 230 Tvj = 125 C 240 Tvj = 25 C 360 Tvj = 125 C 530 Tvj = 25 C 530 Tvj = 125 C 670 ns ns ns ns mJ mJ tpsc V9GE = 15 V, Tvj = 125 C, VCC = 1000 V, VCEM CHIP 1700 V 8500 A 10 nH TC = 25 C 0.06 TC = 125 C 0.085 m 2) Collector emitter saturation voltage is given at chip level $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1554-01 Oct 03 page 2 of 9 61$( 'LRGHFKDUDFWHULVWLFYDOXHV 3DUDPHWHU Continous forward voltage 6\PERO &RQGLWLRQV 3) VF Peak reverse recovery current IF = 1800 A IRM Recovered charge VCC = 900 V, IF = 1800 A, VGE = 15 V, RG = 0.82 L = 60 nH inductive load QRR Reverse recovery time trr Reverse recovery energy Erec PLQ W\S PD[ Tvj = 25 C 1.65 2.0 Tvj = 125 C 1.7 2.0 Tvj = 25 C 1170 Tvj = 125 C 1470 Tvj = 25 C 435 Tvj = 125 C 770 Tvj = 25 C 550 Tvj = 125 C 870 Tvj = 25 C 300 Tvj = 125 C 530 8QLW V A C ns mJ 3) Forward voltage is given at chip level 7KHUPDOSURSHUWLHV 3DUDPHWHU 6\PERO &RQGLWLRQV PLQ IGBT thermal resistance junction to case Rth(j-c)IGBT 0.009 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W Thermal resistance case to heatsink Rth(c-h) per module, grease = 1W/m x K W\S PD[ 0.006 8QLW K/W 0HFKDQLFDOSURSHUWLHV 3DUDPHWHU Dimensions 6\PERO &RQGLWLRQV x L W x H Typical , see outline drawing PLQ PD[ x 190 140 38 Clearance distance DC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 23 Surface creepage distance DSC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 33 Weight W\S x 8QLW mm mm 19 mm 32 1500 gr $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1554-01 Oct 03 page 3 of 9 61$( (OHFWULFDOFRQILJXUDWLRQ 2XWOLQHGUDZLQJ 1RWHDOOGLPHQVLRQVDUHVKRZQLQPP 7KLVLVDQHOHFWURVWDWLFVHQVLWLYHGHYLFHSOHDVHREVHUYHWKHLQWHUQDWLRQDOVWDQGDUG,(&FKDS,; $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1554-01 Oct 03 page 4 of 9 61$( 3600 3600 3200 3200 VCE = 25 V 25 C 2800 2400 2400 2000 2000 IC [A] IC [A] 125 C 2800 1600 1600 1200 1200 800 800 125 C 25 C 400 400 VGE = 15 V 0 0 0 1 2 3 4 0 5 1 2 3 4 6 7 8 9 10 11 12 13 VGE [V] VCE [V] )LJ 5 )LJ Typical onstate characteristics, chip level 3600 Typical transfer characteristics, chip level 3600 17V 3200 17V 3200 15V 15V 2800 13V 2800 2400 11V 2400 13V 11V 9V 2000 IC [A] IC [A] 9V 1600 2000 1600 1200 1200 800 800 400 400 Tvj = 25 C Tvj = 125 C 0 0 0 1 2 3 4 5 6 0 VCE [V] )LJ Typical output characteristics, chip level 1 2 3 4 5 6 VCE [V] )LJ Typical output characteristics, chip level $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1554-01 Oct 03 page 5 of 9 61$( 2.5 2.0 VCC = 900 V RG = 0.82 ohm VGE = 15 V Tvj = 125 C L = 60 nH 2 Eon, Eoff [J] Eon, Eoff [J] 1.5 VCC = 900 V IC = 1800 A VGE = 15 V Tvj = 125 C L = 60 nH 1.0 Eoff Eon 1.5 1 Eoff Eon 0.5 0.5 ( 6: [P- ] = 1.38 ( - 4 , & 2 + 0.317 , & + 190 0.0 0 0 1000 2000 3000 0 4000 2 )LJ )LJ Typical switching energies per pulse vs collector current 6 8 Typical switching energies per pulse vs gate resistor 10 10 VCC = 900 V RG = 0.82 ohm VGE = 15 V Tvj = 125 C L = 60 nH VCC = 900 V IC = 1800 A VGE = 15 V Tvj = 125 C L = 60 nH td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 4 RG [ohm] IC [A] td(off) 1 td(off) 1 tr td(on) tf td(on) tf tr 0.1 0.1 0 1000 2000 3000 4000 0 IC [A] )LJ Typical switching times vs collector current 2 4 6 8 Rg [ohm] )LJ Typical switching times vs gate resistor $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1554-01 Oct 03 page 6 of 9 61$( 1000 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 900 V Cies 15 100 VGE [V] C [nF] VCC = 1300 Coes 10 10 Cres 5 IC = 1800 A Tvj = 25 C 0 1 0 )LJ 5 10 15 20 VCE [V] 25 30 0 35 )LJ Typical capacitances vs collector-emitter voltage 2 4 6 8 Qg [C] 10 12 14 Typical gate charge characteristics 2.5 VCC 1300 V 2 ICpulse / IC 1.5 1 0.5 IC, Chip IC, Module 0 0 )LJ 500 1000 VCE [V] 1500 2000 Turn-off safe operating area (RBSOA) $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1554-01 Oct 03 page 7 of 9 61$( VCC = 900 V RG = 0.82 ohm Tvj = 125 C L = 60 nH 700 900 1800 VCC = 900 V IF = 1800 A Tvj = 125 C L = 60 nH 800 IRM 700 1500 600 1600 1400 400 1000 300 1200 Erec Erec [mJ] Erec [mJ] QRR IRM [A], QRR [C] 600 500 500 1000 IRM 400 800 QRR 300 Erec 200 500 100 IRM [A], QRR [C] 2000 800 600 200 400 100 200 ( UHF [P- ] = -4.77 ( - 5 , ) 2 + 0.354 , ) + 60.8 0 0 1000 2000 3000 0 4000 0 IF [A] )LJ 0 0 2 4 6 8 RG [ohm] )LJ Typical reverse recovery characteristics vs forward current Typical reverse recovery characteristics vs gate resistor 3600 3200 25C 2800 125C IF [A] 2400 2000 1600 1200 800 400 0 0 0.5 1 1.5 2 2.5 VF [V] )LJ Typical diode forward characteristics, chip level $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH Doc. No. 5SYA 1554-01 Oct 03 page 8 of 9 61$( 0.1 $QDO\WLFDOIXQFWLRQIRUWUDQVLHQWWKHUPDO LPSHGDQFH n Zth JC(t) = Ri(1 - e - t/ i ) 0.01 Zth(j-c) IGBT 0.001 0.0001 0.001 )LJ 0.01 0.1 t [s] 1 i 1 2 3 4 IGBT i =1 Ri(K/kW) 5.97 1.99 0.619 0.465 i(ms) 179 22 2.4 0.54 DIODE Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) Diode Ri(K/kW) 11.1 3.36 1.27 1.34 i(ms) 189 30 7.4 1.4 5 10 Thermal impedance vs time This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. $%%6ZLW]HUODQG/WG6HPLFRQGXFWRUVUHVHUYHVWKHULJKWWRFKDQJHVSHFLILFDWLRQVZLWKRXWQRWLFH $%%6ZLW]HUODQG/WG 6HPLFRQGXFWRUV Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1554-01 Oct 03